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DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF170 N-channel enhancement mode vertical D-MOS transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope. Designed for use as a Surface Mounted Device (SMD) in thin and thick-film circuits with applications in relay, high-speed and line transformer drivers. FEATURES * Direct interface to C-MOS, TTL, etc. * High-speed switching * No secondary breakdown QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 C Drain-source on-resistance ID = 200 mA; VGS = 10 V Transfer admittance ID = 200 mA; VDS = 10 V PINNING - SOT23 1 2 3 = gate = source = drain VDS VGSO ID Ptot RDS(on) | Yfs| max. max. max. max. typ. max. min. typ.
PMBF170
60 V 20 V 250 mA 300 mW 2.5 5.0 100 mS 200 mS
Marking code: PMBF170 = PKX PIN CONFIGURATION
handbook, halfpage
3
handbook, 2 columns
d
g
1 Top view 2
MSB003 MBB076 - 1
s
Fig.1 Simplified outline and symbol.
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) From junction to ambient (note 2) Notes 1. Mounted on ceramic substrate measuring 10 mm x 8 mm x 0.7 mm. 2. Mounted on printed-circuit board. Rth j-a Rth j-a = = VDS VGSO ID IDM Ptot Tstg Tj max. max. max. max. max. max. max.
PMBF170
60 V 20 V 250 mA 500 mA 300 mW (note 1) 250 mW (note 2) 150 C
-65 to +150 C
430 K/W 500 K/W
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Drain-source breakdown voltage ID = 10 A; VGS = 0 Drain-source leakage current VDS = 25 V; VGS = 0 VDS = 48 V; VGS = 0 Gate-source leakage current VGS = 15 V; VDS = 0 Gate-source cut-off voltage ID = 1 mA; VDS = VGS Drain-source on-resistance ID = 200 mA; VGS = 10 V Transfer admittance ID = 200 mA; VDS = 10 V Input capacitance VDS = 10 V; VGS = 0 V; f = 1 MHz Output capacitance VDS = 10 V; VGS = 0 V; f = 1 MHz Feedback capacitance VDS = 10 V; VGS = 0 V; f = 1 MHz Switching times VGS = 0 to 10 V; ID = 200 mA ; VDD = 50 V ton toff max. max. Crss typ. max. Coss typ. max. Ciss typ. max. Yfs min. typ. RDS(on) typ. max. VGS(th) min. max. IGSS max. IDSS IDSS max. max. V(BR) DSS min. typ.
PMBF170
60 V 90 V
500 nA 1 A 10 nA 0.8 V 3.0 V 2.5 5.0 100 mS 200 mS
25 pF 40 pF
22 pF 30 pF
6 pF 10 pF
10 ns 15 ns
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
PMBF170
handbook, halfpage
VDD = 50 V
handbook, halfpage
90 %
INPUT 10 %
10 V 0V ID 50
MSA631
90 % OUTPUT 10 % ton toff
MBB692
Fig.2 Switching times test circuit.
Fig.3 Input and output waveforms.
April 1995
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
PACKAGE OUTLINES Plastic surface mounted package; 3 leads
PMBF170
SOT23
D
B
E
A
X
HE
vMA
3
Q A A1
1
e1 e bp
2
wMB detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1
OUTLINE VERSION SOT23
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
April 1995
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistor
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS
PMBF170
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
April 1995
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/02/pp8
Date of release: April 1995
Document order number:
9397 750 02504

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